• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A method of layer transfer comprising a step of providing an initial substrate, a step of providing an intermediate substrate, a first step of assembling the intermediate substrate and the initial substrate, a step of thinning the initial substrate after having was assembled to the intermediate substrate, a step of providing a final substrate, a second step of assembling the initial thinned substrate and the final substrate, a step of detaching the intermediate substrate after the second assembly step in which the intermediate substrate comprises surface silicon intended to be assembled to the initial substrate, the initial substrate does not substantially comprise surface silicon intended to be assembled to the intermediate substrate, a deposit of a first so-called temporary bonding layer of SOG type comprising methylsiloxane in a state liquid by centrifugal coating is done on the surface of the initial substrate does not comprising substantially no silicon followed by a first densification heat treatment of said first so-called temporary bonding layer before the first assembly step, the second assembly step is via a second SOG bonding layer comprising silicate or methylsilsexioquane in liquid state and deposited by centrifugal coating followed by a second densification heat treatment, and wherein the final substrate is designed such that it would deteriorate upon application of a heat treatment exceeding 300 ° C.
    公开号:FR3079660A1
    申请号:FR1800257
    申请日:2018-03-29
    公开日:2019-10-04
    发明作者:Djamel Belhachemi
    申请人:Soitec SA；
    IPC主号:
    专利说明:

    Layer transfer method
    FIELD OF THE INVENTION
    The present invention relates to a method for transferring a layer.
    STATE OF THE ART
    Layer transfer methods are known, comprising a step of supplying an initial substrate, a step of providing an intermediate substrate, a first step of assembling the intermediate substrate and the initial substrate, a step of thinning the initial substrate after being assembled with the intermediate substrate, a step of providing a final substrate, a second step of assembling the thinned initial substrate and the final substrate, a step of detaching the intermediate substrate after the second assembly step. Such a method is described for example in document WO0237556.
    Nevertheless, there remains a need for applications of the 3D integration type of plates comprising, for example components, given that this type of process must not exceed a certain thermal budget in order not to deteriorate said components, in particular the presence of metallic lines in the initial substrate and / or in the final substrate does not allow temperatures of 300 ° C. to be exceeded.
    STATEMENT OF THE INVENTION
    The present invention aims to overcome these limitations of the state of the art by proposing a layer transfer process which is implemented at low temperatures below 300 ° C or less. By this it is possible to remedy the problems currently encountered.
    The invention relates to a layer transfer method comprising a step of providing an initial substrate, a step of providing an intermediate substrate, a first step of assembling the intermediate substrate and the initial substrate, a thinning step. from the initial substrate after being assembled to the intermediate substrate, a step of supplying a final substrate, a second step of assembling the thinned initial substrate and the final substrate, a step of detaching the intermediate substrate after the second assembly step in which the intermediate substrate comprises silicon on the surface intended to be assembled with the initial substrate, the initial substrate does not comprise substantially any silicon on the surface intended to be assembled with the intermediate substrate, a deposition of a first so-called temporary bonding layer of the type SOG comprising methylsiloxane in liquid state by centrifugal coating is f has on the surface of the initial substrate not comprising substantially no silicon followed by a first heat treatment for densification of this first so-called temporary bonding layer before the first assembly step, the second assembly step is carried out via a second layer SOG type bonding comprising silicate or methylsilsexioquane in liquid state and deposited by centrifugal coating followed by a second densification heat treatment, and in which the final substrate is designed so that it would deteriorate during application of heat treatment exceeding 300 ° C.
    In advantageous embodiments, the initial substrate comprises components designed so that they would deteriorate during the application of a heat treatment exceeding 300 ° C.
    In advantageous embodiments, the first and / or the second densification heat treatment is carried out at a temperature below
    300 ° C, preferably less than 200 ° C, or even more preferably less than 100 ° C.
    In advantageous embodiments, the first and / or the second assembly step are carried out by direct bonding by molecular adhesion.
    In advantageous embodiments, the initial substrate is chosen from the group of lithium niobate or lithium tantalate.
    In advantageous embodiments, the initial substrate is chosen from the group of GaAs, InP, or Ge.
    In advantageous embodiments, the intermediate substrate is silicon.
    In advantageous embodiments, the final substrate is made of silicon comprising components designed such that they would deteriorate during the application of a heat treatment exceeding 300 ° C.
    In advantageous embodiments the final substrate is a flexible plastic.
    In advantageous embodiments, the detachment step is carried out by a heat treatment at a temperature below 300 ° C, more preferably below 200 ° C, or even more preferably below 100 ° C.
    DESCRIPTION OF THE FIGURES
    Other characteristics and advantages of the invention will be better understood on reading the detailed description which follows, with reference to the attached drawing in which:
    • Figure 1 illustrates a layer transfer method according to an embodiment of the invention;
    To make the figures easier to read, the different layers are not necessarily shown to scale.
    DETAILED DESCRIPTION OF EMBODIMENTS OF THE INVENTION
    FIG. 1 schematically illustrates the process for transferring a layer 100 ′ obtained from an initial substrate 100 by a thinning step 2 ′ after having been assembled during a first assembly step T to an intermediate substrate 200 via a first so-called temporary bonding layer 300. This transfer method further comprises a second step of assembling 3 'of said layer 100' after the thinning step 2 'to a final substrate 500 via a second bonding layer 400 followed by a detachment step at the interface present between the initial substrate 100 and the first so-called temporary bonding layer 300.
    The first so-called temporary bonding layer 300 and the second bonding layer 400 are generally chosen from the SOG family (from the Anglo-Saxon term "Spin On Glass" meaning glass which can be deposited by centrifugation) which have the property of being liquid state at room temperature but can densify and be made solid, thanks to an appropriate heat treatment.
    This technique consists in rotating the substrate on which the deposition of the layer (300, 400) is provided on itself at a substantially constant and relatively high speed, in order to spread said layer in liquid state uniformly over the whole surface of the substrate by centrifugal force. To this end, the substrate is typically placed and maintained by drawing a vacuum on a turntable.
    A person skilled in the art is able to determine the operating conditions, such as the volume deposited on the surface of the substrate, the speed of rotation of the substrate, and the minimum duration of the deposit as a function of the thickness desired for the adhesive layer.
    The thicknesses of said first so-called temporary bonding layer 300 and second bonding layer 400 are typically between 2 μm and 8 μm. In addition, the centrifugal coating technique used is advantageous in that the deposition of the layer (300, 400) is carried out at ambient temperature, and is followed by a densification annealing at a fairly low temperature, and therefore does not generate no deformation of the substrate on which the dielectric layer is formed.
    According to a nonlimiting example of the invention, the first and / or the second densification heat treatment is carried out at a temperature below 300 ° C, preferably below 200 ° C, or even more preferably below 100 ° C.
    Since the detachment step is carried out by a heat treatment at a temperature below 300 ° C, more preferably below 200 ° C, or even more preferably below 100 ° C
    The first so-called temporary bonding layer 300 is chosen from families of SOGs of the "methylsiloxane" type, sold for example under the references "LSFxx" by the company FILMTRONICS.
    The second bonding layer 400 is chosen from SOG families of “silicate” or “methylsilsexioquane” types, marketed for example under the references “20B” or “400F” by the company FILMTRONIX or “FOX16” by the company DOW CORNING .
    According to the invention, the initial substrate 100 does not comprise substantially any silicon on the surface intended to be assembled with the intermediate substrate 200 as well as the intermediate substrate 200 comprises silicon on the surface intended to be assembled with the initial substrate 100.
    The presence or absence of silicon on the surface thus makes it possible to influence and adapt the bonding interface energy of the interfaces present between the initial substrate 100 and the first so-called temporary bonding layer 300 and between the first so-called temporary bonding layer 300 and the intermediate substrate 200. The presence or absence of silicon and thus of molecular bonds present on the “silanole” type surface determines these bonding interface energies because said first so-called temporary bonding layer 300 has a composition after densification so that bonding bonds are made via the assimilation of said molecular bonds of the “silanole” type.
    According to a nonlimiting example of the invention, the initial substrate 100 is chosen from the group of lithium niobate or lithium tantalate.
    According to a nonlimiting example of the invention, the initial substrate 100 is chosen from the group of GaAs, InP, or Ge.
    According to a nonlimiting example of the invention, the intermediate substrate 200 is made of silicon.
    According to a nonlimiting example of the invention, the intermediate substrate 200 is made of glass.
    According to a nonlimiting example of the invention, the intermediate substrate 200 is of any substrate other than silicon but covered on the surface with a layer of polycrystalline silicon.
    The initial substrate 100 on which the first so-called temporary bonding layer 300 has been deposited and densified is assembled on the intermediate substrate during the first assembly step T.
    After the thinning step 2 ′ of the substrate 100 the second bonding layer 400 is deposited and densified either on the final substrate 500 or on the layer of the thinned initial substrate 100 ′, or on both, during the second step d 'assembly 3'.
    The first and / or second assembly step (T, 3 ’) is preferably carried out by direct bonding by molecular adhesion. The bonding is preferably carried out at room temperature, that is to say approximately 20 ° C. It is however possible to carry out hot bonding at a temperature between 20 ° C and 50 ° C, and more preferably between 20 ° C and 30 ° C.
    In addition, the bonding step is advantageously carried out at low pressure, that is to say at a pressure less than or equal to 5 mTorr, which makes it possible to desorb the water from the surfaces forming the bonding interface, c that is, the surface of the electrically insulating layer 300 and the surface of the support substrate 100. Carrying out the bonding step under vacuum makes it possible to further improve the desorption of water at the bonding interface.
    A heat treatment in order to reinforce the bonding interface can be done at low temperatures up to 300 ° C without the whole assembly undergoing too great deformations causing the breakage of the materials or the detachment at the level of the paste interface.
    The first so-called temporary bonding layer 300 according to the invention chosen from families of SOGs of the “methylsiloxane” type together the fact that the initial substrate 100 does not comprise substantially any silicon on the surface intended to be assembled to the intermediate substrate 200 as well as the intermediate substrate 200 comprises silicon on the surface intended to be assembled with the initial substrate 100 so that the interface between the initial substrate 100 and the first so-called temporary bonding layer 300 is less strong in bonding interface energy than the interface between the first so-called temporary bonding layer 300 and the intermediate substrate 200.
    These bonding interface energies obtained by direct bonding between the surface of the initial substrate 100 to the intermediate substrate 200 via the first so-called temporary bonding layer 300 of the present invention are high and allow the step of thinning the initial substrate 100 by mechanical chemical etching (CMP).
    These bonding interface energies obtained are so high that the method according to the invention allows the step of thinning the initial substrate 100 by chemical mechanical etching (CMP) even in the case where there is a significant difference in thermal coefficient of expansion between the initial substrate 100 and the intermediate substrate 200 is present which is the case for an initial substrate 100 of lithium niobate or lithium tantalate and an intermediate substrate 200 of silicon.
    The second assembly step is carried out via a second bonding layer 400 of the SOG type comprising silicate or methylsilsexioquane in liquid state and deposited by centrifugal coating followed by a second thermal densification treatment, and in which the final substrate is designed in such a way. so that it would deteriorate upon application of a heat treatment exceeding 300 ° C. It should be noted that the bonding interface energies obtained by direct bonding between the surface of the initial substrate thinned 100 'to the final substrate 500 via the second bonding layer 400 of the present invention are higher than the interface energies bonding obtained by direct bonding between the surface of the initial substrate 100 to the intermediate substrate 200 via the first so-called temporary bonding layer 300 of the present invention.
    The detachment step 4 ′ is done by a heat treatment at a temperature below 300 ° C, more preferably below 200 ° C, or even more preferably below 100 ° C.
    Thus, the detachment step 4 'makes it possible to detach at the interface between the initial substrate 100 and the first so-called temporary bonding layer 300. This interface corresponds to the surface initially prepared of the initial substrate 100 for depositing the first so-called temporary bonding layer 300. The detachment releases this surface, and thus the components possibly present in the initial substrate 100, and thus allows a co-integration of components simple and ready to be easily accessed after having transferred the thinned layer from the initial substrate 100 ' .
    In addition to an application of thermal stress as described above, an application of mechanical stress, for example by inserting a blade at the edge of the plate can be used instead.
    According to a nonlimiting example of the invention, the final substrate 500 is made of silicon comprising components designed such that they would deteriorate during the application of a heat treatment exceeding 300 ° C.
    According to another non-limiting embodiment, illustrated schematically in FIG. 2, the final substrate 500 can be of silicon material comprising, in addition, a trapping layer towards the interface to be assembled with the thinned layer 100 ′ of the initial substrate 100, allowing trapping of electric carriers induced by the frequency operation of radio frequency components. This layer thus makes it possible to reduce insertion losses and improve the performance of said devices.
    According to a nonlimiting example of the invention, the final substrate 500 is of flexible plastic. Together with a thinned layer of initial substrate 100 ’made of piezoelectric material, this allows any application comprising components for“ wearable ”application.
    Furthermore, it should be noted that the size of the final substrate 500 is not limited and a multiple transfer of different initial substrates 100 onto the same final substrate is possible.
    权利要求:
    Claims (10)
    [1" id="c-fr-0001]
    1. Layer transfer method comprising the following steps:
    a step of supplying an initial substrate (100);
    a step of supplying an intermediate substrate (200);
    a first assembly step (Γ) of the intermediate substrate (200) and the initial substrate (100);
    a step of thinning (2 ′) the initial substrate (100) after having been assembled with the intermediate substrate (200);
    a step of supplying a final substrate (500);
    a second assembly step (3 ′) of the thinned initial substrate (100) and the final substrate (500);
    a detachment step (4 ’) of the intermediate substrate (200) after the second assembly step (4’);
    characterized in that the intermediate substrate (200) comprises silicon on the surface intended to be assembled with the initial substrate (100);
    the initial substrate (100) does not comprise silicon on the surface intended to be assembled with the intermediate substrate (200);
    a first so-called temporary bonding layer (300) of the SOG type comprising methylsiloxane in the liquid state by centrifugal coating is deposited on the surface of the initial substrate not comprising silicon followed by a first heat treatment for densification of this first so-called temporary bonding layer before the first assembly step;
    the second assembly step (3 ′) is carried out via a second bonding layer (400) of the SOG type comprising silicate or methylsilsexioquane in liquid state and deposited by centrifugal coating followed by a second densification heat treatment;
    and in that the final substrate (500) is designed so that it would deteriorate upon application of a heat treatment exceeding 300 ° C.
    [2" id="c-fr-0002]
    2. Method for transferring a layer according to the preceding claim, in which the initial substrate (100) comprises components designed such that they would deteriorate during the application of a treatment.
    5 thermal over 300 ° C.
    [3" id="c-fr-0003]
    3. Transfer method according to one of the preceding claims wherein the first eVou the second densification heat treatment are carried out at a temperature below 300 ° C, preferably below
    10,200 ° C.
    [4" id="c-fr-0004]
    4. Transfer method according to one of the preceding claims wherein the first and / or the second assembly step (T, 3 ’) are done by direct bonding by molecular adhesion.
    [5" id="c-fr-0005]
    5. A transfer method according to one of the preceding claims in which the initial substrate (100) is chosen from the group of lithium niobate or lithium tantalate.
    20
    [6" id="c-fr-0006]
    6. A transfer method according to claims 1 to 4 wherein the initial substrate (100) is chosen from the group of GaAs, InP, or Ge.
    [7" id="c-fr-0007]
    7. Transfer method according to one of the preceding claims wherein the intermediate substrate (200) is silicon.
    [8" id="c-fr-0008]
    8. Transfer method according to one of the preceding claims wherein the final substrate (500) is silicon comprising components designed such that they would deteriorate during the application of a heat treatment exceeding 300 ° C.
    [9" id="c-fr-0009]
    9. Transfer method according to one of claims 1 to 7 wherein the final substrate (500) is a flexible plastic.
    [10" id="c-fr-0010]
    10. Transfer method according to one of the preceding claims, in which the detachment step (4) is carried out by a heat treatment at a temperature below 300 ° C, more preferably below 200 ° C.
    类似技术:
    公开号 | 公开日 | 专利标题
    EP1879220A2|2008-01-16|Direct water-repellent gluing method of two substrates used in electronics, optics or optoelectronics
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    FR3093860A1|2020-09-18|Method of transferring a useful layer onto a support substrate
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    FR2915624A1|2008-10-31|Semiconductor material substrates e.g. donor substrate, splicing method, involves applying heat treatment of insulation degassing to substrates or between substrates if substrates support two isolating layers
    同族专利:
    公开号 | 公开日
    WO2019186267A1|2019-10-03|
    SG11202009447XA|2020-10-29|
    FR3079660B1|2020-04-17|
    CN111902927A|2020-11-06|
    JP2021518663A|2021-08-02|
    KR20200138320A|2020-12-09|
    US20210166968A1|2021-06-03|
    EP3776643A1|2021-02-17|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US8679946B2|2000-11-06|2014-03-25|Commissariat A L'energie Atomique Et Aux Energies Alternatives|Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrate|
    FR2940852A1|2009-04-22|2010-07-09|Commissariat Energie Atomique|Micro-technological layer i.e. thin film, transferring method for use during formation of electronic, optical and mechanical component, involves causing detachment on porous layer so as to obtain transfer layer|
    FR3108788A1|2020-03-24|2021-10-01|Soitec|A method of manufacturing a piezoelectric structure for a radiofrequency device which can be used for the transfer of a piezoelectric layer, and a method of transferring such a piezoelectric layer|
    FR3108789A1|2020-03-24|2021-10-01|Soitec|A method of manufacturing a piezoelectric structure for a radiofrequency device which can be used for the transfer of a piezoelectric layer, and a method of transferring such a piezoelectric layer|
    法律状态:
    2019-02-19| PLFP| Fee payment|Year of fee payment: 2 |
    2019-10-04| PLSC| Publication of the preliminary search report|Effective date: 20191004 |
    2020-02-20| PLFP| Fee payment|Year of fee payment: 3 |
    2021-02-25| PLFP| Fee payment|Year of fee payment: 4 |
    2022-02-21| PLFP| Fee payment|Year of fee payment: 5 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1800257A|FR3079660B1|2018-03-29|2018-03-29|METHOD FOR TRANSFERRING A LAYER|
    FR1800257|2018-03-29|FR1800257A| FR3079660B1|2018-03-29|2018-03-29|METHOD FOR TRANSFERRING A LAYER|
    JP2020549781A| JP2021518663A|2018-03-29|2019-03-27|Methods for transferring layers|
    EP19721379.6A| EP3776643A1|2018-03-29|2019-03-27|Layer transfer method|
    KR1020207030996A| KR20200138320A|2018-03-29|2019-03-27|Layer transfer method|
    SG11202009447XA| SG11202009447XA|2018-03-29|2019-03-27|Process for transferring a layer|
    US17/042,019| US20210166968A1|2018-03-29|2019-03-27|Layer transfer method|
    PCT/IB2019/000206| WO2019186267A1|2018-03-29|2019-03-27|Layer transfer method|
    CN201980021411.XA| CN111902927A|2018-03-29|2019-03-27|Layer transfer method|
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